- 13 secondsLet's go inside an Intel 4004 microprocessor to see an individual transistor-24 July 2017, 12:00 pm
- 11 secondsTo make this transistor, first oxide then nitride layers are grown-24 July 2017, 12:00 pm
- 12 secondsA shadow mask then exposes a photographic emulsion-24 July 2017, 12:00 pm
- 7 secondsExposed nitride is then etched away-24 July 2017, 12:00 pm
- 12 secondsOxygen reacts with the Si to grow more oxide-24 July 2017, 12:00 pm
- 4 secondsBy heating in silane, polycrystal Si is then grown-24 July 2017, 12:00 pm
- 10 secondsA stripe is exposed in a second photographic emulsion-24 July 2017, 12:00 pm
- 9 secondsExposed polycrystal Si is etched away leaving the transistor gate-24 July 2017, 12:00 pm
- 12 secondsPhosphorus ions then penetrate thin oxide to create the source and drain-24 July 2017, 12:00 pm
- 6 secondsHeating in oxygen grows an insulating coat on the gate-24 July 2017, 12:00 pm
- 10 secondsA third photographic emulsion defines windows above the source and drain-24 July 2017, 12:00 pm
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