• 13 seconds
    Let's go inside an Intel 4004 microprocessor to see an individual transistor
    -
    24 July 2017, 12:00 pm
  • 11 seconds
    To make this transistor, first oxide then nitride layers are grown
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    24 July 2017, 12:00 pm
  • 12 seconds
    A shadow mask then exposes a photographic emulsion
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    24 July 2017, 12:00 pm
  • 7 seconds
    Exposed nitride is then etched away
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    24 July 2017, 12:00 pm
  • 12 seconds
    Oxygen reacts with the Si to grow more oxide
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    24 July 2017, 12:00 pm
  • 4 seconds
    By heating in silane, polycrystal Si is then grown
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    24 July 2017, 12:00 pm
  • 10 seconds
    A stripe is exposed in a second photographic emulsion
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    24 July 2017, 12:00 pm
  • 9 seconds
    Exposed polycrystal Si is etched away leaving the transistor gate
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    24 July 2017, 12:00 pm
  • 12 seconds
    Phosphorus ions then penetrate thin oxide to create the source and drain
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    24 July 2017, 12:00 pm
  • 6 seconds
    Heating in oxygen grows an insulating coat on the gate
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    24 July 2017, 12:00 pm
  • 10 seconds
    A third photographic emulsion defines windows above the source and drain
    -
    24 July 2017, 12:00 pm
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